Linearization of Broadband Microwave Amplifier

Abstract

The linearization of broadband power amplifier for application in the frequency range 0.9–1.3 GHz is considered in this paper. The amplifier is designed for LDMOSFET characterized by the maximum output power 4W designing the broadband lumped element matching circuits and matching circuits in topologies that combines LC elements and transmission lines. The linearization of the amplifier is carried out by the second harmonics of the fundamental signals injected at the input and output of the amplifier transistor. The effects of linearization are considered for the case of two sinusoidal signals separated in frequency by different intervals up to 80 MHz ranging input power levels to saturation.